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| SEMICONDUCTOR TECHNICAL DATA General Description KHB6D0N40P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB6D0N40P A O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 9.9 + 0.2 A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS=400V, ID=6.0A Drain-Source ON Resistance : RDS(ON)=1.0 Qg(typ.)=21nC @VGS=10V 15.95 MAX 1.3+0.1/-0.05 _ 0.8 + 0.1 _ 3.6 + 0.2 _ 2.8 + 0.1 3.7 0.5+0.1/-0.05 1.5 _ 13.08 + 0.3 1.46 _ 1.4 + 0.1 _ 1.27 + 0.1 _ 2.54 + 0.2 _ 4.5 + 0.2 _ 2.4 + 0.2 _ 9.2 + 0.2 MAXIMUM RATING (Tc=25 ) RATING 1. GATE 2. DRAIN 3. SOURCE P Q CHARACTERISTIC SYMBOL KHB6D0N40F UNIT KHB6D0N40P KHB6D0N40F2 400 30 6.0 6.0* 3.6* 24* 320 7.4 4.5 73 38 0.3 150 -55 150 mJ mJ V/ns W W/ Q 1 2 3 TO-220AB KHB6D0N40F Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 VDSS VGSS ID 3.6 IDP EAS EAR dv/dt PD 0.59 Tj Tstg 24 V V E A F C O DIM B MILLIMETERS A K L M J R D N N H A B C D E F G H J K L M N O Q R _ 10.16 + 0.2 _ 15.87 + 0.2 _ 2.54 + 0.2 _ 0.8 + 0.1 _ 3.18 + 0.1 _ 3.3 + 0.1 _ 12.57 + 0.2 _ 0.5 + 0.1 13.0 MAX _ 3.23 + 0.1 1.47 MAX 1.47 MAX _ 2.54 + 0.2 _ 6.68 + 0.2 _ 4.7 + 0.2 _ 2.76 + 0.2 G 1. GATE 2. DRAIN 3. SOURCE Maximum Junction Temperature Storage Temperature Range Thermal Characteristics TO-220IS (1) KHB6D0N40F2 A Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-toAmbient RthJC RthCS RthJA C F 1.71 0.5 62.5 3.31 62.5 /W S /W /W P E G B DIM MILLIMETERS * : Drain current limited by maximum junction temperature. K L L R PIN CONNECTION D M D D N N H G 1 2 3 A B C D E F G H J K L M N P Q R S _ 10.0 + 0.3 _ 15.0 + 0.3 _ 2.70 + 0.3 0.76+0.09/-0.05 _ 3.2 +0.2 _ 3.0 + 0.3 _ 12.0 + 0.3 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 +0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2 0.5 Typ Q J 1. GATE 2. DRAIN 3. SOURCE S TO-220IS 2007. 5. 10 Revision No : 0 1/7 KHB6D0N40P/F/F2 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=400V, VGS=0V, VDS=VGS, ID=250 A VGS= 30V, VDS=0V VGS=10V, ID=3A 400 2.0 0.54 0.9 10 4.0 100 1 V V/ A V nA Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Reverse Transfer Capacitance Output Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS VGS Note 5) Essentially independent of operating temperature. 2007. 5. 10 Revision No : 0 2/7 KHB6D0N40P/F/F2 Fig1. ID - VDS VGS TOP : 15.0 V 10.0 V 8.0 V 101 7.0 V 6.0 V 5.5 V 5.0 V Bottom: 4.5 V Fig2. ID - VGS Drain Current ID (A) Drain Current ID (A) 10 1 -55 C 100 150 C 25 C 10 0 10-1 10-1 100 101 10 2 -1 4 6 8 10 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) Fig3. BVDSS - Tj Normalized Breakdown Voltage BVDSS 1.2 3.2 Fig4. RDS(ON) - ID On - Resistance RDS(ON) () 1.1 2.4 VG = 10V 1.0 1.6 VG = 20V 0.9 0.8 0.8 -100 -50 0 50 100 150 0.0 0 4 8 12 16 20 24 Junction Temperature Tj ( C ) Drain Current ID (A) Fig5. IDR - VSD Normalized On Resistance RDS(ON) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 Fig6. RDS(ON) - Tj VGS = 10V ID = 3A Reverse Drain Current IDR (A) 101 100 150 C 25 C 10-1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 Source - Drain Voltage VSD (V) Junction Temperature Tj ( C) 2007. 5. 10 Revision No : 0 3/7 KHB6D0N40P/F/F2 Fig7. C - VDS 1600 1400 Fig8. Qg- VGS Gate - Source Voltage VGS (V) Frequency = 1MHz 12 I = 6A D 10 8 6 4 2 0 0 5 10 15 20 VDS = 80V VDS = 200V VDS = 320V Capacitance (pF) 1200 1000 800 600 400 200 0 10-1 Ciss Coss Crss 100 101 Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Fig9. Safe Operation Area 102 Fig10. Safe Operation Area (KHB6D0N40F, KHB6D0N40F2) 10 2 Operation in this area is limited by RDS(ON) 10 s (KHB6D0N40P) Operation in this area is limited by RDS(ON) Drain Current ID (A) 101 100s 1ms Drain Current ID (A) 10s 10 1 100s 1ms 100 10ms 100ms DC 100 10 ms 100 ms 10-1 Tc= 25 C Tj = 150 C Single nonrepetitive pulse 10-1 DC Tc= 25 C Tj = 150 C Single nonrepetitive pulse 10-2 100 101 102 103 10-2 0 10 101 102 103 Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V) Fig11. ID - Tj 6 5 Drain Current ID (A) 4 3 2 1 0 25 50 75 100 125 150 Junction Temperature Tj ( C ) 2007. 5. 10 Revision No : 0 4/7 KHB6D0N40P/F/F2 Fig12. Transient Thermal Response Curve Normalized Transient Thermal Resistance 100 Duty=0.5 0.2 10-1 0.1 0.05 PDM t1 t2 Single Pulse 0.02 0.01 - Duty Factor, D= t1/t2 10-3 10-2 10-1 100 101 10-2 10-5 10-4 TIME (sec) Fig13. Transient Thermal Response Curve Normalized Transient Thermal Resistance 100 Duty=0.5 0.2 10-1 0.1 0.05 PDM t1 t2 Single Pulse 0.02 0.01 10-2 - Duty Factor, D= t1/t2 10-3 10-2 10-1 100 101 10-5 10-4 TIME (sec) 2007. 5. 10 Revision No : 0 5/7 KHB6D0N40P/F/F2 Fig14. Gate Charge VGS 10 V ID Fast Recovery Diode 0.8 x VDSS 1.0 mA ID Q VDS VGS Qgs Qgd Qg Fig15. Single Pulsed Avalanche Energy EAS= 1 LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 0.5 VDSS 25 VDS 10 V ID(t) VGS VDD VDS(t) Time Fig16. Resistive Load Switching tp VDS 90% RL 0.5 VDSS 25 VDS 10V VGS 10% td(on) ton tr td(off) tf toff VGS 2007. 5. 10 Revision No : 0 6/7 KHB6D0N40P/F/F2 Fig17. Source - Drain Diode Reverse Recovery and dv /dt DUT VDS IF Body Diode Forword Current ISD (DUT) IRM di/dt IS Body Diode Reverse Current 0.8 VDSS VDS (DUT) driver Body Diode Recovery dv/dt VSD VDD 10V VGS Body Diode Forword Voltage drop 2007. 5. 10 Revision No : 0 7/7 |
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